As the semiconductor industry continues to push scaling to 14 nm and beyond to improve device performance, acidic plating chemistries are being stretched beyond their capabilities for uniform coverage, particularly with the copper seed layer obtained by physical vapor deposition. As a result, achieving void-free filling of advanced node interconnects has become a challenge.
To address this, aveni has developed an alkaline copper plating bath enabling a unique and innovative bottom up effect for advanced damascene and dual damascene interconnect metallization. These efficient new plating chemistries enable excellent nucleation, void-free gap filling, improved line resistance and reduced cost. aveni’s Vincent Mévellec presented a poster session on this development, titled, “A Novel Bottom Up Fill Mechanism for the Metallization of Advanced Node Copper Interconnects” during the 18th annual IITC conference. The conference took place on May 23-26, 2016 in conjunction with the 33rd Advanced Metallization Conference at the DoubleTree Hotel in San Jose, California. Other collaborating aveni team members include M. Thiam, D. Suhr, L. Religieux, P. Blondeau, J.B. Chaumont and F. Raynal; Massy, France.
Download the IITC 2016 poster here.