Vincent Mevellec, Senior Director of Technology R&D at aveni, will present a bottom-up Cu fill mechanism for the metallization of advanced node copper interconnects at the Electrochemical Society’s (ECS) PRiME 2016 on Monday, Oct. 3, 2016 in Honolulu. Mevellec’s presentation will detail an alkaline Cu plating chemistry process that creates void-free fill with perfect nucleation, and enables the removal of the cobalt liner currently used to promote Cu seed layer coverage. The process, developed by aveni scientists, promises to improve line resistance and reduce cost over the latest cobalt-liner-based thin film approaches.
Held every four years, ECS PRiME offers a diverse blend of electrochemical and solid-state science and technology; and serves as one of the largest Pacific Rim forums for the discussion of interdisciplinary research to support scientific advancements in the renewable energy, biomedical, water sanitation, communications, transportation, and infrastructure sectors.
ECS PRiME is a joint effort of The Electrochemical Society, The Electrochemical Society of Japan, and The Korean Electrochemical Society, with the technical co-sponsorship of the Chinese Society of Electrochemistry, the Electrochemistry Division of the Royal Australian Chemical Institute, the Japan Society of Applied Physics, the Korean Physical Society Semiconductor Division, and the Semiconductor Physics Division of the Chinese Physics Society.