Product Description
Actra is a palladium-based activation chemistry dedicated to electroless solutions. Nexl is a nickel boron electroless chemistry advantageously replacing the outdated CVD tungsten technology.
Metallization of advanced 3D NAND memory devices is achieved by the combination of Actra/Nexl technologies.
Advantages
Actra is specifically designed to activate any substrates, preserving their integrity, and preparing the surface for Nexl.
Nexl is an electroless solution packed with innovations. It acts as a diffusion barrier to contaminants and metals, allowing direct plating on high-K layer and removing the barrier step altogether.
Nexl is also specifically formulated for word line fill. It plates ultra-conformally in the slit and bottom-up in the word lines.
Actra/Nexl is a defect-free, efficient, and extendable solution for the 3D NAND metallization.
Product Description
An alkaline copper electroplating chemistry dedicated to the metallization of micro-LED specific structures. Cuvia LED allows the deposition of ultra-conformal copper seed layers in dense, deep, and small pitch (< 1 µm) trenches. Provides substrates protection during deposition and excellent film continuity.
Advantages
Cuvia LED is unique in its design thanks to copper complexation. Copper is maintained in aqueous solution by organic complexing agents allowing flawless copper reduction on a variety of substrates that are usually not compatible with electrodeposition.
Cuvia LED can be deposited directly on a CVD or PVD metal barrier to copper or a PVD copper seed, enabling fill of challenging aspect ratios and geometry thanks to its nucleation properties and seed repair capability.
The organic complexing agent is not reduced during copper deposition, producing a pure copper film that can withstand high thermal budget and gives superior resistivity.
Product Description
An alkaline copper electroplating chemistry dedicated to the metallization of Back End Of Line (BEOL) critical layers. It is designed to achieve defect-free results below 36 nm pitch for logic devices N14 and below.
Advantages
Cuwave can be deposited on very thin copper seeds thanks to its alkaline pH and proprietary formulation, which preserves the under layer from any etching or damage.
Cuwave achieves void-free fill by a bottom-up mechanism.
Product Description
An alkaline copper electroplating chemistry dedicated to the metallization of advanced packaging. Cuvia IC allows the deposition of ultra-conformal copper seed layers in high aspect ratio (> 12:1) structures. Also allows several dimensions to be coated at the same time, on the same device.
Advantages
Cuvia IC is unique in its design thanks to copper complexation. Copper is maintained in aqueous solution by organic complexing agents allowing flawless copper reduction on a variety of substrates that are usually not compatible with electrodeposition.
Cuvia IC can be deposited directly on an ALD, CVD or PVD metal barrier to copper or a PVD copper seed, enabling fill of challenging aspect ratios and geometry thanks to its nucleation properties and seed repair capability.
The organic complexing agent is not reduced during copper deposition, producing a pure copper film that can withstand high thermal budget and gives low resistivity.
Product Description
A cobalt electroplating chemistry dedicated to the metallization of Middle End Of Line (MEOL) and Back End Of Line (BEOL) critical layers. Cobalt filling is achieved below 36nm pitch through a bottom-up mechanism, for logic devices N2 and below.
Advantages
Cowave HEXA is formulated with graphene to achieve unprecedented resistance to corrosion.
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